2N4416-E3
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -50°C~150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 8 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 15V |
| Breakdown Voltage | -36V |
| Gate to Source Voltage (Vgs) | -30V |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 0.8 pF |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 3V @ 1nA |
| Voltage - Breakdown (V(BR)GSS) | 30V |
| Power Gain-Min (Gp) | 10dB |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
