Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | LOW NOISE |
Subcategory | Other Transistors |
Voltage - Rated DC | 30V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 50mA |
Frequency | 50MHz |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | 2N5088 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 625mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 50MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100μA 5V |
Current - Collector Cutoff (Max) | 50nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
Collector Emitter Breakdown Voltage | 30V |
Transition Frequency | 50MHz |
Collector Emitter Saturation Voltage | 500mV |
Collector Base Voltage (VCBO) | 35V |
Emitter Base Voltage (VEBO) | 3V |
hFE Min | 300 |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |