Parameters | |
---|---|
Terminal Form | UNSPECIFIED |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | Single |
Case Connection | ISOLATED |
Power - Max | 284W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 900V |
Max Collector Current | 68A |
Current - Collector Cutoff (Max) | 250μA |
Collector Emitter Breakdown Voltage | 900V |
Input Capacitance | 3.3nF |
Turn On Time | 43 ns |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 40A |
Turn Off Time-Nom (toff) | 215 ns |
IGBT Type | PT |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 3.3nF @ 25V |
VCEsat-Max | 3.9 V |
RoHS Status | RoHS Compliant |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Published | 1999 |
Series | POWER MOS 7® |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 284W |
Terminal Position | UPPER |