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APTGF50H60T2G

POWER MOD IGBT NPT FULL BRDG SP2


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGF50H60T2G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 424
  • Description: POWER MOD IGBT NPT FULL BRDG SP2 (Kg)

Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 22
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Number of Elements 1
Configuration Full Bridge Inverter
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 2.2nF
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.2nF @ 25V
VCEsat-Max 2.45 V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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