APTGL475DA120D3G
| Parameters | |
|---|---|
| JESD-30 Code | R-XUFM-X5 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 2080W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.2V |
| Max Collector Current | 610A |
| Current - Collector Cutoff (Max) | 5mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 24.6nF |
| Turn On Time | 270 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 400A |
| Turn Off Time-Nom (toff) | 580 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 24.6nF @ 25V |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | D-3 Module |
| Number of Pins | 11 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 2.08kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 11 |
See Relate Datesheet
