Parameters | |
---|---|
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | SP1 |
Number of Pins | 1 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2007 |
JESD-609 Code | e1 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 12 |
Terminal Finish | TIN SILVER COPPER |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 208W |
Terminal Position | UPPER |
Terminal Form | THROUGH-HOLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 12 |
Qualification Status | Not Qualified |
Number of Elements | 4 |
Configuration | Full Bridge Inverter |
Case Connection | ISOLATED |
Power - Max | 208W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.1V |
Max Collector Current | 55A |
Current - Collector Cutoff (Max) | 250μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 2.5nF |
Turn On Time | 140 ns |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A |
Turn Off Time-Nom (toff) | 610 ns |
IGBT Type | Trench Field Stop |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 2.5nF @ 25V |
RoHS Status | RoHS Compliant |