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APTGT35H120T3G

Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGT35H120T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 400
  • Description: Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 208W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 55A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.5nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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