APTGV25H120BG
| Parameters | |
|---|---|
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP4 |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Published | 2012 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 21 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 156W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 21 |
| JESD-30 Code | R-XUFM-X21 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 5 |
| Configuration | Boost Chopper, Full Bridge |
| Case Connection | ISOLATED |
| Power - Max | 156W |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.1V |
| Max Collector Current | 40A |
| Current - Collector Cutoff (Max) | 250μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 1.8nF |
| Turn On Time | 140 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Turn Off Time-Nom (toff) | 610 ns |
| IGBT Type | NPT, Trench Field Stop |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 1.8nF @ 25V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
