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APTGV50H60T3G

Trans IGBT Module N-CH 600V 80A/80A/65A/65A 32-Pin Case SP-3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGV50H60T3G
  • Package: SP3
  • Datasheet: -
  • Stock: 321
  • Description: Trans IGBT Module N-CH 600V 80A/80A/65A/65A 32-Pin Case SP-3 (Kg)

Details

Tags

Parameters
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
VCEsat-Max 2.45 V
RoHS Status RoHS Compliant
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 176W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Qualification Status Not Qualified
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.15nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn Off Time-Nom (toff) 310 ns
IGBT Type NPT, Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
See Relate Datesheet

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