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APTGV75H60T3G

Trans IGBT Module N-CH 600V 100A/100A/84A/84A 32-Pin Case SP-3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGV75H60T3G
  • Package: SP3
  • Datasheet: -
  • Stock: 628
  • Description: Trans IGBT Module N-CH 600V 100A/100A/84A/84A 32-Pin Case SP-3 (Kg)

Details

Tags

Parameters
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 4.62nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 75A
Turn Off Time-Nom (toff) 310 ns
IGBT Type NPT, Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.62nF @ 25V
VCEsat-Max 1.9 V
Radiation Hardening No
RoHS Status RoHS Compliant
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 32
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Position UPPER
See Relate Datesheet

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