BF1212R,215
| Parameters | |
|---|---|
| Transistor Application | AMPLIFIER |
| Transistor Type | N-Channel Dual Gate |
| Gain | 30dB |
| Drain Current-Max (Abs) (ID) | 0.03A |
| DS Breakdown Voltage-Min | 6V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 0.18W |
| Noise Figure | 0.9dB |
| Voltage - Test | 5V |
| Feedback Cap-Max (Crss) | 0.03 pF |
| RoHS Status | ROHS3 Compliant |
| Package / Case | SOT-143R |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated | 6V |
| Additional Feature | LOW NOISE |
| HTS Code | 8541.21.00.75 |
| Subcategory | FET General Purpose Powers |
| Current Rating (Amps) | 30mA |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 400MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BF1212 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | DUAL GATE, ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 12mA |
See Relate Datesheet
