BSC0910NDIATMA1
| Parameters | |
|---|---|
| Drain Current-Max (Abs) (ID) | 11A |
| Drain-source On Resistance-Max | 0.0059Ohm |
| DS Breakdown Voltage-Min | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate, 4.5V Drive |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 1W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN SOURCE |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 11A 31A |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Continuous Drain Current (ID) | 31A |
| Gate to Source Voltage (Vgs) | 20V |
See Relate Datesheet
