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BSC123N08NS3GATMA1

BSC123N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC123N08NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 837
  • Description: BSC123N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 66W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 66W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.3m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 40V
Current - Continuous Drain (Id) @ 25°C 11A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain Current-Max (Abs) (ID) 55A
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 70 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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