banner_page

BSD235NH6327XTSA1

BSD235NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSD235NH6327XTSA1
  • Package: 6-VSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 637
  • Description: BSD235NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Max Power Dissipation 500mW
Terminal Form GULL WING
Base Part Number BSD235
Reference Standard AEC-Q101
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 3.8 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 350m Ω @ 950mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1.6μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 63pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.32nC @ 4.5V
Rise Time 3.6ns
Turn-Off Delay Time 4.5 ns
Continuous Drain Current (ID) 950mA
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage 20V
Drain Current-Max (Abs) (ID) 0.95A
Drain-source On Resistance-Max 0.35Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good