Parameters | |
---|---|
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 1998 |
Series | IGBTMOD™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 7 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 1.1kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Current Rating | 300A |
Number of Elements | 2 |
Configuration | Half Bridge |
Element Configuration | Dual |
Power Dissipation | 890W |
Case Connection | ISOLATED |
Power - Max | 1100W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.8V |
Max Collector Current | 300A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 600V |
Input Capacitance | 30nF |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 300A |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 30nF @ 10V |
RoHS Status | Non-RoHS Compliant |