Parameters | |
---|---|
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Published | 2001 |
Series | IGBTMOD™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 7 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 2.1kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Number of Elements | 2 |
Configuration | Half Bridge |
Element Configuration | Dual |
Power Dissipation | 2.1kW |
Case Connection | ISOLATED |
Power - Max | 2100W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 3.2V |
Max Collector Current | 300A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 60nF |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 300A |
Turn Off Time-Nom (toff) | 700 ns |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 60nF @ 10V |
RoHS Status | Non-RoHS Compliant |