FD200R12KE3
| Parameters | |
|---|---|
| Surface Mount | NO |
| Number of Terminals | 5 |
| Transistor Element Material | SILICON |
| Pbfree Code | icon-pbfree yes |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 5 |
| JESD-30 Code | R-XUFM-X5 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | ISOLATED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1040W |
| Turn On Time | 400 ns |
| Collector Current-Max (IC) | 295A |
| Turn Off Time-Nom (toff) | 830 ns |
| Collector-Emitter Voltage-Max | 1200V |
| Gate-Emitter Voltage-Max | 20V |
| VCEsat-Max | 2.15 V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
