FDMQ86530L
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 12-WDFN Exposed Pad |
| Number of Pins | 12 |
| Weight | 242.3mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | 511CR |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2010 |
| Series | GreenBridge™ PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Max Power Dissipation | 1.9W |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Configuration | COMPLEX |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.9W |
| Case Connection | DRAIN SOURCE |
| Turn On Delay Time | 8.8 ns |
| FET Type | 4 N-Channel (H-Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17.5m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2295pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Rise Time | 3.8ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 2.8 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 8A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain-source On Resistance-Max | 0.0175Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 50A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 15 pF |
| Turn On Time-Max (ton) | 28ns |
| Height | 800μm |
| Length | 5mm |
| Width | 4.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
