Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Weight | 211mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerTrench® |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 7.5MOhm |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 2.5W |
JESD-30 Code | R-PDSO-N6 |
Number of Elements | 2 |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
Case Connection | DRAIN SOURCE |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.5m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 12A 17A |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
Rise Time | 3.8ns |
Fall Time (Typ) | 3.2 ns |
Turn-Off Delay Time | 27 ns |
Continuous Drain Current (ID) | 17A |
Threshold Voltage | 1.8V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 40A |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Nominal Vgs | 1.8 V |
Height | 700μm |
Length | 5mm |
Width | 6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |