Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 23MOhm |
Subcategory | Other Transistors |
Voltage - Rated DC | -30V |
Max Power Dissipation | 900mW |
Terminal Form | GULL WING |
Current Rating | -7A |
Number of Elements | 2 |
Voltage | 30V |
Element Configuration | Dual |
Current | 7A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.6W |
Turn On Delay Time | 13 ns |
FET Type | 2 P-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 23m Ω @ 7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1233pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
Rise Time | 10ns |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 48 ns |
Continuous Drain Current (ID) | 7A |
Threshold Voltage | -1.6V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -30V |
Dual Supply Voltage | -30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Nominal Vgs | -1.6 V |
Height | 1.5mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |