Parameters | |
---|---|
JESD-30 Code | R-XUFM-X7 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Configuration | 2 Independent |
Case Connection | ISOLATED |
Power - Max | 3700W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Current - Collector Cutoff (Max) | 5mA |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 600A |
Power Dissipation-Max (Abs) | 3700W |
Turn On Time | 270 ns |
Vce(on) (Max) @ Vge, Ic | 3.75V @ 15V, 600A |
Turn Off Time-Nom (toff) | 630 ns |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 39nF @ 25V |
VCEsat-Max | 3.75 V |
RoHS Status | RoHS Compliant |
Mounting Type | Chassis Mount |
Package / Case | Module |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~125°C |
Published | 2002 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 7 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 11 |