Parameters | |
---|---|
Pin Count | 11 |
JESD-30 Code | R-XUFM-X11 |
Number of Elements | 2 |
Configuration | Half Bridge |
Element Configuration | Dual |
Case Connection | ISOLATED |
Power - Max | 1350W |
Transistor Application | POWER CONTROL |
Rise Time | 365ns |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.6V |
Max Collector Current | 400A |
Current - Collector Cutoff (Max) | 500μA |
Collector Emitter Breakdown Voltage | 250V |
Input Capacitance | 36nF |
Turn On Time | 1615 ns |
Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 400A |
Turn Off Time-Nom (toff) | 1633 ns |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 36nF @ 30V |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | Dual INT-A-PAK (3 + 8) |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2002 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 11 |
ECCN Code | EAR99 |
Terminal Finish | TIN LEAD |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 250V |
Max Power Dissipation | 1.35kW |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | 235 |
Current Rating | 400A |
Base Part Number | GA*TD |