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HN1A01FE-Y,LF

Trans GP BJT PNP 50V 0.15A 6-Pin ES Embossed T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN1A01FE-Y,LF
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 898
  • Description: Trans GP BJT PNP 50V 0.15A 6-Pin ES Embossed T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Supplier Device Package ES6
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 100mW
Polarity PNP
Power - Max 100mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Collector Emitter Saturation Voltage -100mV
Max Breakdown Voltage 50V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 120
Continuous Collector Current -150mA
Height 550μm
Length 1.6mm
Width 1.2mm
RoHS Status RoHS Compliant
See Relate Datesheet

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