IRFI4020H-117P
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-5 Full Pack |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 100MOhm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 21W |
| Terminal Position | SINGLE |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 21W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.4 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | AMPLIFIER |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Rise Time | 8ns |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 9.1A |
| Threshold Voltage | 4.9V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 36A |
| Avalanche Energy Rating (Eas) | 130 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 110 ns |
| FET Feature | Standard |
| Nominal Vgs | 4.9 V |
| Height | 9.02mm |
| Length | 10.6172mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
