IRG4IBC20WPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 34W |
| Terminal Position | SINGLE |
| Current Rating | 11.8A |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Power Dissipation | 34W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Rise Time | 14ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.6V |
| Max Collector Current | 12A |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.16V |
| Turn On Time | 36 ns |
| Test Condition | 480V, 6.5A, 50 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 6.5A |
| Turn Off Time-Nom (toff) | 300 ns |
| Gate Charge | 26nC |
| Current - Collector Pulsed (Icm) | 52A |
| Td (on/off) @ 25°C | 22ns/110ns |
| Switching Energy | 60μJ (on), 80μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 96ns |
| Height | 14.224mm |
| Length | 10.7442mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
