IRG7PH35UPBF
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2010 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN OVER NICKEL |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 210W |
| Peak Reflow Temperature (Cel) | 250 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 30 ns |
| Power - Max | 210W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 160 ns |
| Collector Emitter Voltage (VCEO) | 2.2V |
| Max Collector Current | 55A |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.2V |
| Turn On Time | 45 ns |
| Test Condition | 600V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 400 ns |
| IGBT Type | Trench |
| Gate Charge | 85nC |
| Current - Collector Pulsed (Icm) | 60A |
| Td (on/off) @ 25°C | 30ns/160ns |
| Switching Energy | 1.06mJ (on), 620μJ (off) |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 105ns |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.31mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
