banner_page

IRGS4610DPBF

IRGS4610DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGS4610DPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 571
  • Description: IRGS4610DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 77W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Input Type Standard
Power - Max 77W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 16A
Reverse Recovery Time 74 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Gate Charge 13nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 27ns/75ns
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good