Parameters | |
---|---|
Height | 4.83mm |
Length | 10.67mm |
Width | 9.65mm |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Weight | 260.39037mg |
Operating Temperature | -40°C~175°C TJ |
Packaging | Tube |
Published | 2001 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 77W |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 77W |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2V |
Max Collector Current | 16A |
Reverse Recovery Time | 74 ns |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.7V |
Test Condition | 400V, 6A, 47 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 6A |
Gate Charge | 13nC |
Current - Collector Pulsed (Icm) | 18A |
Td (on/off) @ 25°C | 27ns/75ns |
Switching Energy | 56μJ (on), 122μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |