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IXGR48N60B3D1

IGBT 600V 60A 150W ISOPLUS247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGR48N60B3D1
  • Package: ISOPLUS247™
  • Datasheet: PDF
  • Stock: 931
  • Description: IGBT 600V 60A 150W ISOPLUS247 (Kg)

Details

Tags

Parameters
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*48N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 100 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.77V
Turn On Time 44 ns
Test Condition 480V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Turn Off Time-Nom (toff) 347 ns
IGBT Type PT
Gate Charge 115nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 22ns/130ns
Switching Energy 840μJ (on), 660μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 200ns
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) NOT SPECIFIED
See Relate Datesheet

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