Parameters | |
---|---|
Current Rating | 500mA |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | DEPLETION MODE |
Power Dissipation | 625mW |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Breakdown Voltage | -25V |
Drain to Source Voltage (Vdss) | 25V |
Continuous Drain Current (ID) | 500mA |
Gate to Source Voltage (Vgs) | -25V |
FET Technology | JUNCTION |
Drain to Source Resistance | 3Ohm |
Current - Drain (Idss) @ Vds (Vgs=0) | 500mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 4.5V @ 1μA |
Resistance - RDS(On) | 3Ohm |
Height | 5.33mm |
Length | 5.2mm |
Width | 4.19mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 201mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |
Voltage - Rated DC | 25V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |