J176
| Parameters | |
|---|---|
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Continuous Drain Current (ID) | -25mA |
| Gate to Source Voltage (Vgs) | 30V |
| FET Technology | JUNCTION |
| Drain to Source Resistance | 250Ohm |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 10nA |
| Resistance - RDS(On) | 250Ohm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 201mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN (SN) |
| HTS Code | 8541.21.00.95 |
| Subcategory | FET General Purpose Small Signal |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 350mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 25mA |
| Base Part Number | J176 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 350mW |
See Relate Datesheet
