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MBR12030CTR

MBR12030CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MBR12030CTR
  • Package: Twin Tower
  • Datasheet: -
  • Stock: 924
  • Description: MBR12030CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Voltage - Forward (Vf) (Max) @ If 650mV @ 60A
Forward Current 60A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 800A
Application POWER
Current - Average Rectified (Io) 120A DC
Forward Voltage 650mV
Max Reverse Voltage (DC) 30V
Average Rectified Current 120A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 30V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Mount Chassis Mount, Through Hole
Mounting Type Chassis Mount
Package / Case Twin Tower
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination Solder
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Pitch 2mm
Terminal Position UPPER
Orientation Right Angle
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Contacts 6
Number of Elements 2
Contact Resistance 20mOhm
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 20V
See Relate Datesheet

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