Parameters | |
---|---|
Voltage - Forward (Vf) (Max) @ If | 650mV @ 60A |
Forward Current | 60A |
Max Reverse Leakage Current | 1μA |
Operating Temperature - Junction | -55°C~150°C |
Max Surge Current | 800A |
Application | POWER |
Current - Average Rectified (Io) | 120A DC |
Forward Voltage | 650mV |
Max Reverse Voltage (DC) | 30V |
Average Rectified Current | 120A |
Number of Phases | 1 |
Peak Reverse Current | 1A |
Max Repetitive Reverse Voltage (Vrrm) | 30V |
Diode Configuration | 1 Pair Common Anode |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | PRODUCTION (Last Updated: 6 months ago) |
Mount | Chassis Mount, Through Hole |
Mounting Type | Chassis Mount |
Package / Case | Twin Tower |
Number of Pins | 2 |
Diode Element Material | SILICON |
Packaging | Bulk |
Published | 2003 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Termination | Solder |
ECCN Code | EAR99 |
Max Operating Temperature | 175°C |
Min Operating Temperature | -40°C |
HTS Code | 8541.10.00.80 |
Pitch | 2mm |
Terminal Position | UPPER |
Orientation | Right Angle |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Contacts | 6 |
Number of Elements | 2 |
Contact Resistance | 20mOhm |
Element Configuration | Common Anode |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 3mA @ 20V |