MBR500200CT
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Twin Tower |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| JESD-30 Code | R-PUFM-X2 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 2 |
| Element Configuration | Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 3mA @ 200V |
| Voltage - Forward (Vf) (Max) @ If | 920mV @ 250A |
| Operating Temperature - Junction | -55°C~150°C |
| Application | POWER |
| Max Reverse Voltage (DC) | 200V |
| Average Rectified Current | 250A |
| Number of Phases | 1 |
| Non-rep Pk Forward Current-Max | 3500A |
| Diode Configuration | 1 Pair Common Cathode |
| Reverse Current-Max | 3000μA |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
