MIXA10W1200TML
| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | E1 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Bulk |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 24 |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 65W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| JESD-30 Code | R-PUFM-X24 |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Power - Max | 65W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.1V |
| Max Collector Current | 17A |
| Current - Collector Cutoff (Max) | 150μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Turn On Time | 110 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 9A |
| Turn Off Time-Nom (toff) | 350 ns |
| IGBT Type | PT |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
