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MUBW10-06A6K

IGBT MODULE 600V 11A 50W E1


  • Manufacturer: IXYS
  • Nocochips NO: 401-MUBW10-06A6K
  • Package: E1
  • Datasheet: PDF
  • Stock: 642
  • Description: IGBT MODULE 600V 11A 50W E1 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish PURE TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 50W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 25
JESD-30 Code R-XUFM-X25
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 50W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 3.3V
Max Collector Current 11A
Current - Collector Cutoff (Max) 65μA
Collector Emitter Breakdown Voltage 600V
Reverse Voltage 1.6kV
Input Capacitance 220pF
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 10A
Turn Off Time-Nom (toff) 320 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 0.22nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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