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MWI50-12E6K

MOD IGBT SIXPACK RBSOA 1200V E1


  • Manufacturer: IXYS
  • Nocochips NO: 401-MWI50-12E6K
  • Package: E1
  • Datasheet: PDF
  • Stock: 653
  • Description: MOD IGBT SIXPACK RBSOA 1200V E1 (Kg)

Details

Tags

Parameters
Max Collector Current 51A
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 35A
Turn Off Time-Nom (toff) 490 ns
Mount Chassis Mount
NTC Thermistor Yes
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 2nF @ 25V
Package / Case E1
RoHS Status RoHS Compliant
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 19
Terminal Finish Tin (Sn)
Additional Feature UL RECOGNIZED
Max Power Dissipation 210W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 24
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 210W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.9V
See Relate Datesheet

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