NTUD3170NZT5G
| Parameters | |
|---|---|
| Width | 850μm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SOT-963 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 1.5Ohm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 125mW |
| Terminal Form | FLAT |
| Base Part Number | NTUD3170NZ |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 200mW |
| Turn On Delay Time | 16.5 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 12.5pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 220mA |
| Rise Time | 25.5ns |
| Fall Time (Typ) | 80 ns |
| Turn-Off Delay Time | 142 ns |
| Continuous Drain Current (ID) | 280mA |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 400μm |
| Length | 1.05mm |
See Relate Datesheet
