Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOW NOISE |
HTS Code | 8541.21.00.75 |
Subcategory | FET General Purpose Small Signal |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MBFJ620 |
Pin Count | 6 |
JESD-30 Code | R-PDSO-G6 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS |
Operating Mode | ENHANCEMENT MODE |
Power - Max | 190mW |
FET Type | 2 N-Channel (Dual) |
Transistor Application | AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V |
DS Breakdown Voltage-Min | 25V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 0.19W |
Feedback Cap-Max (Crss) | 2.5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) | 24mA @ 10V |
Voltage - Cutoff (VGS off) @ Id | 2V @ 1μA |
Voltage - Breakdown (V(BR)GSS) | 25V |
Resistance - RDS(On) | 50Ohm |
RoHS Status | ROHS3 Compliant |