VII50-12P1
| Parameters | |
|---|---|
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | ECO-PAC2 |
| Number of Pins | 12 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2006 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| Terminal Finish | Gold (Au) - with Nickel (Ni) barrier |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 208W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | VII |
| Pin Count | 12 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Element Configuration | Dual |
| Case Connection | ISOLATED |
| Power - Max | 208W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 3.7V |
| Max Collector Current | 49A |
| Current - Collector Cutoff (Max) | 1.1mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 1.65nF |
| Turn On Time | 170 ns |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 570 ns |
| IGBT Type | NPT |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 1.65nF @ 25V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
