Inchange Semiconductor

Introducing the latest innovation in electronic components - the NBT35H3R1T Power Bipolar Transistor developed by Inchange Semiconductor. This high-performance transistor offers exceptional reliability and efficiency, making it the ideal choice for a wide range of industrial and consumer applications. The NBT35H3R1T is designed to handle high power outputs with ease, boasting a maximum voltage rating of 100V and a continuous collector current of 3.5A. With its low on-state resistance and high gain, this transistor ensures minimal power dissipation and excellent switching performance. Featuring a compact and durable TO-126 package, this power bipolar transistor is easy to mount onto PCBs and withstands harsh operating conditions, delivering outstanding performance and longevity. It is also RoHS compliant, guaranteeing a lead-free and environmentally-friendly solution. Whether it's for power supplies, motor control, or relay drives, the NBT35H3R1T Power Bipolar Transistor promises to enhance the overall efficiency of your electronic circuits and systems. Trust Inchange Semiconductor for reliable and cutting-edge semiconductor solutions that cater to your specific application needs.