1N5553US
| Parameters | |
|---|---|
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 1μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 9A |
| Case Connection | ISOLATED |
| Forward Current | 5A |
| Operating Temperature - Junction | -65°C~175°C |
| Output Current-Max | 5A |
| Application | POWER |
| Forward Voltage | 1.3V |
| Max Reverse Voltage (DC) | 800V |
| Average Rectified Current | 3A |
| Number of Phases | 1 |
| Reverse Recovery Time | 2 μs |
| Peak Reverse Current | 1μA |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Peak Non-Repetitive Surge Current | 100A |
| Radiation Hardening | Yes |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | IN PRODUCTION (Last Updated: 2 weeks ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, B |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 1997 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Additional Feature | HIGH RELIABILITY |
| HTS Code | 8541.10.00.80 |
| Technology | AVALANCHE |
| Terminal Position | END |
| Terminal Form | WRAP AROUND |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
See Relate Datesheet
