2N5115UB
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Series | Military, MIL-PRF-19500 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| HTS Code | 8541.21.00.95 |
| Subcategory | FET General Purpose Small Signal |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power - Max | 500mW |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 100Ohm |
| FET Technology | JUNCTION |
| Power Dissipation-Max (Abs) | 0.5W |
| Feedback Cap-Max (Crss) | 7 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 60mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 6V @ 1nA |
| Resistance - RDS(On) | 100Ohm |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
