2N5431
| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | Unijunction Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | O-MBCY-W3 |
| Operating Temperature (Max) | 125°C |
| Operating Temperature (Min) | -65°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Voltage - Output | 1V |
| Power Dissipation-Max (Abs) | 0.36W |
| Current - Peak | 400nA |
| Current - Valley (Iv) | 2mA |
| Inter-base Voltage-Max | 35V |
| Intrinsic Stand-off Ratio-Max | 0.8 |
| Intrinsic Stand-off Ratio-Min | 0.72 |
| Static Inter-base Res-Max | 8.5 kΩ |
| Static Inter-base Res-Min | 6 kΩ |
| Valley Point Current-Min | 2mA |
| Emitter Current-Max | 50mA |
| RoHS Status | Non-RoHS Compliant |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Published | 2000 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
See Relate Datesheet
