2N7002BKS,115
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 295mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 300mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 60V |
| Drain Current-Max (Abs) (ID) | 0.3A |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
