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2N7002PV,115

Dual N-Channel 60 V 330 mW 0.8 nC Silicon Surface Mount Mosfet - SOT-666


  • Manufacturer: Nexperia USA Inc.
  • Nocochips NO: 554-2N7002PV,115
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 629
  • Description: Dual N-Channel 60 V 330 mW 0.8 nC Silicon Surface Mount Mosfet - SOT-666 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 330mW
Terminal Form FLAT
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 390mW
Turn On Delay Time 3 ns
Power - Max 330mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V
Rise Time 4ns
Fall Time (Typ) 5 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 350mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 0.35A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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