Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Number of Pins | 6 |
Weight | 3.005049mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 150mW |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 150mW |
Turn On Delay Time | 50 ns |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.5 Ω @ 50mA, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
Drain to Source Voltage (Vdss) | 60V |
Turn-Off Delay Time | 50 ns |
Continuous Drain Current (ID) | 280mA |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Standard |
Feedback Cap-Max (Crss) | 5 pF |
Height | 600μm |
Length | 1.6mm |
Width | 1.2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |