Parameters | |
---|---|
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 3A |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 130MHz |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 80 |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 1.2W |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Frequency | 130MHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | 2STL |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1.2W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 130MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |