Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2001 |
JESD-609 Code | e1 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Max Power Dissipation | 543W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Input Type | Standard |
Power - Max | 543W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.4V |
Max Collector Current | 118A |
Reverse Recovery Time | 80 ns |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 650V |
Turn On Time | 47 ns |
Test Condition | 433V, 45A, 4.3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A |
Turn Off Time-Nom (toff) | 175 ns |
IGBT Type | NPT |
Gate Charge | 203nC |
Current - Collector Pulsed (Icm) | 224A |
Td (on/off) @ 25°C | 15ns/100ns |
RoHS Status | RoHS Compliant |