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APTGF50VDA60T3G

POWER MOD IGBT NPT DL BOOST SP3


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APTGF50VDA60T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 183
  • Description: POWER MOD IGBT NPT DL BOOST SP3 (Kg)

Details

Tags

Parameters
Mount Chassis Mount, Through Hole
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 20
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
Qualification Status Not Qualified
Number of Elements 2
Configuration Dual Boost Chopper
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 2.2nF
Turn On Time 52 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Turn Off Time-Nom (toff) 151 ns
IGBT Type NPT
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.2nF @ 25V
VCEsat-Max 2.45 V
RoHS Status RoHS Compliant
See Relate Datesheet

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