ATF-53189-TR1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Package / Case | TO-243AA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated | 7V |
| Additional Feature | LOW NOISE |
| HTS Code | 8541.21.00.75 |
| Subcategory | FET RF Small Signals |
| Current Rating (Amps) | 300mA |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | compliant |
| Frequency | 900MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-F3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 135mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | pHEMT FET |
| Gain | 17.2dB |
| Drain Current-Max (Abs) (ID) | 0.3A |
| DS Breakdown Voltage-Min | 7V |
| Power - Output | 21.7dBm |
| FET Technology | HIGH ELECTRON MOBILITY |
| Noise Figure | 0.8dB |
| Voltage - Test | 4V |
| Power Dissipation Ambient-Max | 1W |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
