Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Package / Case | 8-WFDFN Exposed Pad |
Number of Pins | 8 |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Additional Feature | LOW NOISE |
Subcategory | FET RF Small Signal |
Voltage - Rated DC | 4V |
Max Power Dissipation | 1W |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 300mA |
Frequency | 2GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | ATF-531P8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
Case Connection | SOURCE |
Current - Test | 135mA |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 4V |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | E-pHEMT |
Continuous Drain Current (ID) | 300mA |
JEDEC-95 Code | MO-229 |
Gate to Source Voltage (Vgs) | 1V |
Gain | 20dB |
Drain Current-Max (Abs) (ID) | 0.3A |
DS Breakdown Voltage-Min | 7V |
Power - Output | 24.5dBm |
FET Technology | HIGH ELECTRON MOBILITY |
Noise Figure | 0.6dB |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |